Flexible Electronics News

Imec Demonstrates Excellent Performance of Si FinFET CMOS Devices

With integrated tungsten buried power rails.

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By: Anthony Locicero

Copy editor, New York Post

At the 2020 Symposia on VLSI Technology and Circuits, imec presented a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not adversely impact the CMOS device characteristics.    When interfacing the BPR with Ru M0A lines through a Ru via contact, excellent resistance values and electromigration behavior have been measured. A complimentary assessment study shows the advantages at the system level of implementing BPRs as a scaling booster in 3 nm...

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